IGBT Infieon FZ900R12KE4 SEMIKRON SKM900GA12E4

IGBT FZ900R12KE4 | SKM900GA12E4

The SEMIKRON IGBT SKM900GA12E4 and Infineon FZ900R12KE4 are both high-power Application for IGBT (Insulated Gate Bi-polar Transistor) modules with very similar technical specifications

IGBT-characteristics:

• Technology:The SKM900GA12E4 uses an Infineon IGBT4 chip and a SEMIKRON CAL4 diode, while the FZ900R12KE4 is a product of Infineon’s C-Series with a Trench Field Stop IGBT.
• Voltage and Current:
• Collector-Emitter Voltage (Vces):1200 V
• Continuous Collector Current (Ic):900 A (at 25°C case temperature)
• Technical Features:The SKM900GA12E4 is noted for having an integrated gate resistor and being suitable for switching frequencies up to 12kHz

The Summery:

Both the SKM900GA12E4 and FZ900R12KE4 are active products and are currently in production. This means they are readily available from their respective manufacturers and authorized distributors in Bangladesh-Dhaka.